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http://www.repositorio.cdtn.br:8080/jspui/handle/123456789/558| Title: | Strctural change and heteroepitaxi induced by rapid thermal annealing of CaF2 films on Si(111) |
| Title of periodic: | Journal of Vacuum Science and Technology A |
| metadata.dc.title.subtitlejournal: | Vacuum, Surfaces and Films |
| Authors: | Mattoso, N. Mosca, D.H. Schreiner, W.H. Mazzaro, I. Teixeira, S.R. Macedo, Waldemar Augusto de Almeida Martins, Maximiliano Delany |
| Affiliation: | Universidade Federal do Paraná/UFPR, Curitiba, PR, Brasil Universidade Federal do Paraná/UFPR, Curitiba, PR, Brasil Universidade Federal do Paraná/UFPR, Curitiba, PR, Brasil Universidade Federal do Paraná/UFPR, Curitiba, Brasil Universidade Federal do Rio Grande do Sul/UFRGS, Porto Alegre, RS, Brasil Centro de Desenvolvimento da Tecnologia Nuclear/CDTN, Belo Horizonte, MG, Brasil Centro de Desenvolvimento da Tecnologia Nuclear/CDTN, Belo Horizonte, MG, Brasil |
| Issue Date: | 1998 |
| Keywords: | Films;crystal growth methods;epitaxy;heat treatments;annealing |
| Abstract: | In this article we show that heteroepitaxial CaF2 films can be induced on Si~111! with a rapid thermal anneal. The change from preferentially oriented polycrystals to a single crystal with type- B epitaxy is visible by different structural techniques. The x-ray photoelectron spectroscopy results indicate the presence of a reacted layer at the CaF2 /Si interface with a pronounced increase of fluorine atoms at this interface. Transmission electron microscopy results show that big structural changes occur due to the thermal pulse. |
| Access: | L |
| Appears in Collections: | Artigo de periódico |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Art-01_Mattoso_N.pdf | 508.54 kB | Adobe PDF | View/Open |
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